| 碳化硅金刚线切割表面粗糙度的研究 |
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| 引用本文： | 袁立伟,张文斌.碳化硅金刚线切割表面粗糙度的研究[J].电子工业专用设备,2011,40(11):4-7. |
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| 作者姓名： | 袁立伟 张文斌 |
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| 作者单位： | 中国电子科技集团公司第四十五研究所,北京,101601 |
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| 摘 要： | 碳化硅是新兴的第三代半导体材料。用固定磨料金刚线切割机对其进行切割加工，分析了加工过程的各项参数对晶片表面粗糙度的影响，为优化碳化硅金刚线切割过程提出依据。
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| 关 键 词： | 碳化硅 固定磨料金刚线切割 表面粗糙度 |
Study on Surface Quality of Silicon Carbide Wafers Sliced by Fixed Abrasive Diamond Wire Saw |
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| YUAN Liwei,Zhang WenBin.Study on Surface Quality of Silicon Carbide Wafers Sliced by Fixed Abrasive Diamond Wire Saw[J].Equipment for Electronic Products Marufacturing,2011,40(11):4-7. |
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| Authors: | YUAN Liwei Zhang WenBin |
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| Affiliation: | (The 45th Research Institute of CETC,Beijing 101601,China) |
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| Abstract: | Silicon carbide is the tertiary semiconductor material. The SiC crystalbar is sliced into wafers by fixed abrasive Diamond wire saw in the experiment. The influences of each parameter on the surface roughness of the wafers are studied in the article. The process of slicing can be optimized by the result. |
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| Keywords: | Silicon carbide Fixed abrasive diamond wire saw Surface roughness |
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