Subnanosecond avalanche switching in high-voltage silicon diodes with abrupt and graded p-n junctions |
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Authors: | V. I. Brylevskii I. A. Smirnova P. B. Rodin I. V. Grekhov |
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Affiliation: | 1. Ioffe Physical Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia
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Abstract: | The phenomenon of delayed avalanche breakdown in high-voltage silicon diodes has been studied for the first time using an experimental setup with specially designed resistive coupler as a part of a high-quality matched measuring tract. Three types of diode structures with identical geometric parameters and close stationary breakdown voltages within 1.1–1.3 kV have been studied, including p +-n-n + structures with abrupt p-n junctions and two different p +-p-n-n + structures with graded p-n junctions. Upon switching of all structures, a voltage step with an amplitude above 1 kV and a rise time of ~100 ps at a breakdown voltage of about 2 kV is formed in the load. However, switching to a state with low (~150 V) residual voltage has been observed only in the structures with an abrupt p-n junction, while the voltage in structures with graded junctions only decreased to a level of ~1 kV, which is close to the stationary breakdown voltage. |
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