Evaluation of the effective threshold energy of the Interband impact ionization in a deep-submicron silicon n-channel MOS transistor |
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| Authors: | V M Borzdov A V Borzdov D S Speransky V V V’yurkov A A Orlikovsky |
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| Affiliation: | 1. Belarussian State University, Nezavisimosty pr. 4, Minsk, 220030, Belarus
2. Institute of Physics and Technology, Russian Academy of Sciences, Nakhimovskii pr. 36/1, Moscow, 117218, Russia
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| Abstract: | Using the ensemble Monte Carlo method allowing for the main features of charge-carrier transport in conditions of strong electric fields, a deep-submicron silicon n-channel MOS transistor with a channel length of 50 nm is simulated. In the Keldysh impact ionization model with a soft threshold in a channel of the simulated transistor, the effective threshold energy of this process is calculated. |
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