| TFT-LCD制造工艺中金属残留的解决方案 |
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| 引用本文： | 蒋冬华,李淳东,李炳天.TFT-LCD制造工艺中金属残留的解决方案[J].液晶与显示,2011,26(2):170-173. |
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| 作者姓名： | 蒋冬华 李淳东 李炳天 |
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| 作者单位： | 成都京东方光电科技有限公司,四川,成都,611731 |
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| 摘 要： | 在TFT-LCD阵列的四次掩模技术中,复合层刻蚀是非常难控制的一道工序,最突出的问题是在复合层刻蚀后信号线的两边有金属残留,金属残留会对之后的绝缘层产生影响,导致断层等不良.调整复合层刻蚀工艺是目前解决金属残留问题的通用方法,但是都没有根本地解决这个问题.文章通过研究信号线刻蚀时间对复合层刻蚀后金属残留的影响,认为通过...
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| 关 键 词： | 四次掩模 复合层 刻蚀 信号线 金属残留 |
Solution for Metal Remain in TFT-LCD Manufacturing Process |
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| JIANG Dong-hua,LEE Soon-dong,LEE Byung-chun.Solution for Metal Remain in TFT-LCD Manufacturing Process[J].Chinese Journal of Liquid Crystals and Displays,2011,26(2):170-173. |
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| Authors: | JIANG Dong-hua LEE Soon-dong LEE Byung-chun |
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| Affiliation: | JIANG Dong-hua,LEE Soon-dong,LEE Byung-chun(Chengdu BOE Optoelectronics Technology Co.Ltd.,Chengdu 611731,China,E-mail: jiangdonghua@boe.com.cn) |
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| Abstract: | In 4-mask manufacturing process of the thin film transistor(TFT) liquid crystal display(LCD),multi-layer etch is a very critical process,because metal remain defect would happen after multi-layer etch,which will influence on the next insulator layer deposition,and induce layer broken.Conventional method for eliminating metal remain is to adjust multi-layer etch process,but there is no fundamental improvement.In this paper,the influence of data line etch time on metal remain after multi-layer etch has been r... |
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| Keywords: | 4-mask multi-layer etch data line metal remain |
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