| PMOS管工艺参数对反相器SET效应的影响 |
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| 引用本文： | 朱佳琪,袁波,吴秀龙. PMOS管工艺参数对反相器SET效应的影响[J]. 微电子学, 2017, 47(6): 842-846 |
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| 作者姓名： | 朱佳琪 袁波 吴秀龙 |
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| 作者单位： | 安徽大学 电子信息工程学院, 合肥 230601,安徽大学 电子信息工程学院, 合肥 230601;中国电子科技集团公司 第二十四研究所, 重庆 400060,安徽大学 电子信息工程学院, 合肥 230601 |
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| 基金项目： | 国家自然科学基金资助项目(61674002) |
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| 摘 要： | 研究了体硅CMOS工艺下数字集成电路的抗辐照特性。利用Synopsys公司的三维半导体器件模拟软件Sentaurus,对数字集成电路中的反相器电路进行单粒子瞬态(SET)效应仿真,分析PMOS管的各种工艺参数对反相器SET效应产生的脉冲电压的影响。研究结果表明,通过降低PMOS管的栅氧层厚度、n阱掺杂浓度、p+深阱掺杂浓度以及提高衬底浓度,可以有效地减小反相器SET脉冲电压的峰值和脉冲宽度。该研究结果对抗辐照数字集成电路设计具有一定的指导作用。
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| 关 键 词： | 工艺参数 单粒子效应 抗辐照 脉冲电压 |
| 收稿时间： | 2017-03-07 |
Research of the Influence of PMOS Process Parameters on the Single Event Transient Effect |
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| ZHU Jiaqi,YUAN Bo and WU Xiulong. Research of the Influence of PMOS Process Parameters on the Single Event Transient Effect[J]. Microelectronics, 2017, 47(6): 842-846 |
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| Authors: | ZHU Jiaqi YUAN Bo WU Xiulong |
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| Affiliation: | School of Electronics and Information Engineering, Anhui University, Hefei 230601, P.R.China,School of Electronics and Information Engineering, Anhui University, Hefei 230601, P.R.China;Sichuan Institute of Solid-State Circuits, China Electronics Technology Group Corp., Chongqing 400060, P.R.China and School of Electronics and Information Engineering, Anhui University, Hefei 230601, P.R.China |
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| Abstract: | Radiation hardened properties of digital integrated circuits in bulk CMOS process were investigated. Using the three-dimensional semiconductor device simulation software Sentaurus from Synopsys, the single event transient effect of a standard basic CMOS inverter cell was simulated. Changes in process parameters of PMOS could vary the pulse voltages generated by single event transient effect, which had been deeply studied. The results showed that the peak value and width of single pulse transient pulse voltage could be effectively reduced by decreasing the thickness of the gate oxide layer, the concentration of n-well doping and deep p+ doping, and by increasing the substrate doping. The results provided a reference for the designers engaged in the design of radiation hardened digital integrated circuits. |
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| Keywords: | Process parameter Single event effect Radiation hardened Pulse voltage |
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