| SIPOS钝化功率晶体管“双线击穿”曲线现象的分析 |
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| 引用本文： | 曹一江, 史良钰, 王振群, 陈建春, 刘晓为,.SIPOS钝化功率晶体管“双线击穿”曲线现象的分析[J].电子器件,2009,32(2). |
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| 作者姓名： | 曹一江 史良钰 王振群 陈建春 刘晓为 |
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| 作者单位： | 1. 哈尔滨理工大学应用科学学院,哈尔滨,150080
2. 哈尔滨工业大学航天学院,哈尔滨,150001 |
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| 摘 要： | 测试半绝缘掺氧多晶硅(SIPOS)层钝化的功率晶体管管芯反向击穿电压曲线时,出现异常击穿曲线--"双线击穿"曲线现象.通过对SIPOS钝化的功率晶体管管芯进行逐层腐蚀,再进行反向击穿曲线测试,以及扫描电镜对SIPOS层结构进行能谱分析,结果显示SIPOS层中氧含量过大,从而产生界面效应造成击穿电压回移,并解释了在应用特定测试仪器测试时显示出"双线击穿曲线"的现象.同时提出解决双线击穿曲线现象的方法.
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| 关 键 词： | 功率晶体管 反向击穿曲线 半绝缘掺氧多晶硅(SIPOS) 双线击穿 扫描电镜 |
Analysis of Double-Line Breakdown Phenomenon for Power Transistor with SIPOS Passivation Layer |
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| CAO Yi-jiang,SHI Liang-yu,WANG Zhen-qun,CHEN Jian-chun,LIU Xiao-wei.Analysis of Double-Line Breakdown Phenomenon for Power Transistor with SIPOS Passivation Layer[J].Journal of Electron Devices,2009,32(2). |
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| Authors: | CAO Yi-jiang SHI Liang-yu WANG Zhen-qun CHEN Jian-chun LIU Xiao-wei |
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| Affiliation: | CAO Yi-jiang1*,SHI Liang-yu1,WANG Zhen-qun1,CHEN Jian-chun1,LIU Xiao-wei21.School of Applied Sciences,Harbin University of Science , Technology,Harbin 150080,China,2.School of Astronautics,Harbin Institute of Technology,Harbin 150001 |
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| Abstract: | In the test of breakdown voltage of power transistor with SIPOS passivation layer before packaging,an abnormal curve of breakdown voltage was found,which was a double-line breakdown voltage curve.After eroding each layer of power transistor and testing breakdown voltage,we used SEM to analyze passivation layer's structure and do point-analysis.The results show that high content of oxygen in SIPOS passivation layer can make interface effect and let breakdown voltage fall back.Finally,an interpretation of dou... |
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