Characterization of InGaAs/GaAs(001) films grown by metalorganic vapor phase epitaxy using alternative sources |
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| Authors: | B K Han L Li M J Kappers R F Hicks H Yoon M S Goorsky K T Higa |
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| Affiliation: | (1) Department of Chemical Engineering, University of California, 5531 Boelter Hall, 90095-1592 Los Angeles, CA;(2) Department of Materials Science and Engineering, University of California, 90095-1595 Los Angeles, CA;(3) NAWCWPNS, Research and Technology Group, 93555 China Lake, CA |
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| Abstract: | Thin films of InxGa1−xAs (0<x<0.012) on GaAs (001) were grown by metalorganic vapor phase epitaxy using triisopropylindium, triisobutylgallium,
and tertiarybutylarsine. The effect of the process conditions, temperature, and V/III ratio on the film quality was studied
using high resolution x-ray diffraction, scanning tunneling microscopy, and Hall measurements. High quality films were grown
at temperatures as low as 475 °C and at a V/III ratio of 100. However, under these conditions, a change in growth mode from
step flow to two-dimensional nucleation was observed. |
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| Keywords: | High resolution x-ray diffraction (HRXRD) InGaAs/GaAs organometallic vapor phase epitaxy (MOVPE) scanning tunneling microscopy (STM) triisopropylindium triisobutylgallium |
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