SOI-CMOS compatible low-power gas sensor using sputtered and drop-coated metal-oxide active layers |
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Authors: | P. Ivanov J. Laconte J. P. Raskin M. Stankova E. Sotter E. Llobet X. Vilanova D. Flandre X. Correig |
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Affiliation: | (1) Department of Electronic Engineering, University Rovira i Virgili, avda. Paisos Catalans 26, 43007 Tarragona, Spain;(2) Research Center in Micro and Nanoscopic Electronics Devices and Materials (CeRMIN), UCL, 3, Place du Levant, 1348 Louvain-La-Neuve, Belgium |
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Abstract: | In this paper, a Silicon-On-Insulator (SOI) solid-state gas-sensor with an original design of a polysilicon loop-shaped microheater fabricated on a thin-stacked dielectric membrane is presented. The microheater ensures high thermal uniformity and very low power consumption (25 mW for heating at 400°C). Sensitive films are based on tin and tungsten oxides deposited either by RF sputtering or drop coating methods. The fabricated sensors are tested to a wide variety of contaminant species and promising results are obtained. The use of completely CMOS compatible TMAH-based bulk micro-machining techniques during the fabrication process, allows easy smart gas sensor integration in SOI-CMOS technology. This makes SOI-based gas-sensing devices particularly attractive for use in handheld battery-operated gas monitors. |
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