A 120-W Boost Converter Operation Using a High-Voltage GaN-HEMT |
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Authors: | Saito W Nitta T Kakiuchi Y Saito Y Tsuda K Omura I Yamaguchi M |
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Affiliation: | Semicond. Co., Kawasaki; |
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Abstract: | A boost converter with a 940-V/4.4 A GaN-HEMT as the main switching device was demonstrated to show the possibility of using high-voltage GaN-HEMTs in power electronic applications. The demonstrated circuit achieved an output power of 122 W and a power efficiency of 94.2% under a drain peak voltage as high as 350 V and a switching frequency of 1 MHz. The dual field-plate structure realized high-voltage switching operation with high power efficiency as dynamic on-resistance was suppressed by an increase of the current collapse phenomena. |
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