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Core/Shell ZnO/ZnS Nanoparticle Electron Transport Layers Enable Efficient All-Solution-Processed Perovskite Light-Emitting Diodes
Authors:Fan Cao  Qianqian Wu  Wunan Li  Sheng Wang  Lingmei Kong  Jianhua Zhang  Xiaoyu Zhang  Hongbo Li  Weihong Hua  Andrey L. Rogach  Xuyong Yang
Affiliation:1. College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, 410073 P. R. China

Nanhu Laser Laboratory, National University of Defense Technology, Changsha, 410073 P. R. China;2. Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, 149 Yanchang Road, Shanghai, 200072 China;3. College of Materials Science and Engineering, Jilin University, Changchun, 130012 P. R. China;4. Experimental Center of Advanced Materials, School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081 P. R. China;5. Department of Materials Science and Engineering, and Centre for Functional Photonics (CFP), City University of Hong Kong, Kowloon, Hong Kong SAR, 999077 P. R. China

Abstract:Solution-processed perovskite-based light-emitting diodes (PeLEDs) are promising candidates for low-cost, large-area displays, while severe deterioration of the perovskite light-emitting layer occurs during deposition of electron transport layers from solution in an issue. Herein, core/shell ZnO/ZnS nanoparticles as a solution-processed electron transport layer in PeLED based on quasi-2D PEA2Csn−1PbnBr3n+1 (PEA = phenylethylammonium) perovskite are employed. The deposition of ZnS shell mitigates trap states on ZnO core by anchoring sulfur to oxygen vacancies, and at the same time removes residual hydroxyl groups, which helps to suppress the interfacial trap-assisted non-radiative recombination and the deprotonation reaction between the perovskite layer and ZnO. The core/shell ZnO/ZnS nanoparticles show comparably high electron mobility to pristine ZnO nanoparticles, combined with the reduced energy barrier between the electron transport layer and the perovskite layer, improving the charge injection balance in PeLEDs. As a result, the optimized PeLEDs employing core/shell ZnO/ZnS nanoparticles as a solution-processed electron transport layer exhibit high peak luminance reaching 32 400 cd m−2, external quantum efficiency of 10.3%, and 20-fold extended longevity as compared to the devices utilizing ZnO nanoparticles, which represents one of the highest overall performances for solution-processed PeLEDs.
Keywords:all-solution-processing  electron transport layers  light-emitting diodes  quasi-2D perovskites  ZnO/ZnS core/shell nanoparticles
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