Formation of TiC via interface reaction between diamond grits and Sn-Ti alloys at relatively low temperatures |
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| Affiliation: | 1. Institute of Manufacturing, Huaqiao University, Xiamen 361021, China;2. School of Materials Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212001, China;3. School of Mechanical and Mining Engineering, The University of Queensland, Brisbane, Queensland 4072, Australia;1. Element Six GmbH, Städeweg 12 – 24, 36151 Burghaun, Germany;2. National University of Science and Technology MISiS, Leninsky pr. 4, Moscow 119049, Moscow, Russia;3. Central Facility for Electron Microscopy, RWTH Aachen University, Ahornstr. 55, D-52074 Aachen, Germany;4. Institute of Solid State Physics, Chernogolovka, Russia;5. Karlsruhe Institute of Technology, Eggenstein-Leopoldshafen, Germany |
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| Abstract: | In this paper, interfacial reaction between diamond grit and Sn-6Ti alloy was systematically studied at brazing temperatures from 600 to 1030 °C. A thin and uniform layer of scallop-like nano-sized TiC grains was formed after brazing for 30 min at 600 °C, and interfacial TiC grains subsequently coarsened as brazing temperature increased to 740 and 880 °C. Strip-like columnar TiC grains in a bilayer structure was further grown as brazing temperature increased to 930 °C. After brazing at 1030 °C, a dense layer of columnar TiC grains were formed. Based on the TEM micrographs of interfacial TiC, the formation and evolution of the growth morphologies of interfacial TiC was believed to be controlled by the diffusion of C flux from diamond grits, which is dependent on the brazing temperatures. |
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