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Selective Cocatalyst Decoration of Narrow-Bandgap Broken-Gap Heterojunction for Directional Charge Transfer and High Photocatalytic Properties |
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| Authors: | Jingwei Li Hongli Fang Mengqi Wu Churong Ma Ruqian Lian San Ping Jiang Mohamed Nawfal Ghazzal Zebao Rui |
| Affiliation: | 1. School of Chemical Engineering and Technology, The Key Laboratory of Low-carbon Chemistry & Energy Conservation of Guangdong Province, Guangdong Engineering Technology Research Center for Platform Chemicals from Marine Biomass and Their Functionalization, Sun Yat-sen University, Zhuhai, 519082 China
Institut de Chimie Physique, UMR 8000 CNRS, Université Paris-Saclay, Orsay, 91405 France School of Chemistry and Chemical Engineering/Institute of Clean Energy and Materials/Guangzhou Key Laboratory for Clean Energy and Materials, Guangzhou University, Guangzhou, 510006 P. R. China;2. School of Chemical Engineering and Technology, The Key Laboratory of Low-carbon Chemistry & Energy Conservation of Guangdong Province, Guangdong Engineering Technology Research Center for Platform Chemicals from Marine Biomass and Their Functionalization, Sun Yat-sen University, Zhuhai, 519082 China;3. Hebei Key Lab of Optic-Electronic Information and Materials, The College of Physics Science and Technology, Hebei University, Baoding, 071002 P. R. China;4. Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Institute of Photonics Technology, Jinan University, Guangzhou, 511443 China;5. Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory, Foshan, Guangdong, 528216 China WA School of Mines: Minerals, Energy and Chemical Engineering, Curtin University, Perth, WA, 6102 Australia;6. Institut de Chimie Physique, UMR 8000 CNRS, Université Paris-Saclay, Orsay, 91405 France |
| Abstract: | Narrow-bandgap semiconductors are promising photocatalysts facing the challenges of low photoredox potentials and high carrier recombination. Here, a broken-gap heterojunction Bi/Bi2S3/Bi/MnO2/MnOx, composed of narrow-bandgap semiconductors, is selectively decorated by Bi, MnOx nanodots (NDs) to achieve robust photoredox ability. The Bi NDs insertion at the Bi2S3/MnO2 interface induces a vertical carrier migration to realize sufficient photoredox potentials to produce O2?? and ?OH active species. The surface decoration of Bi2S3/Bi/MnO2 by Bi and MnOx cocatalysts drives electrons and holes in opposite directions for optimal photogenerated charge separation. The selective cocatalysts decoration realizes synergistic surface and bulk phase carrier separation. Density functional theory (DFT) calculation suggests that Bi and MnOx NDs act as active sites enhancing the absorption and reactants activation. The decorated broken-gap heterojunction demonstrates excellent performance for full-light driving organic pollution degradation with great commercial application potential. |
| Keywords: | broken-gap heterojunction carrier separation cocatalyst nanodots narrow-bandgap semiconductors organic pollution degradation |