DC substrate bias effects on the physical properties of hydrogenated amorphous carbon films grown by plasma-assisted chemical vapour deposition |
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Affiliation: | 1. The Deep Time Institute, Austin, TX 78759, USA;2. Department of Geological Sciences, Stanford, CA 94305, USA |
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Abstract: | Hydrogenated amorphous carbon (a-C:H) films have been grown from argon/methane gas mixtures by electron cyclotron resonance chemical vapour deposition (ECR-CVD) on silicon substrates. The effects of the application of a DC substrate bias on the structural, morphological and mechanical properties of the films have been explored by multiple analysis techniques such as infrared and micro-Raman spectroscopy, atomic force microscopy, nanoindentation and pin-on-disk wear testing. In general, within the range of applied substrate bias (i.e. from −300 up to +100 V) we have observed a strong correlation between all measured properties of the a-C:H films and the ion energy. This work shows that the properties can differ greatly and indicates a threshold energy in the order of 90 eV. For the production of hard, low-friction coatings energies above this value are required. |
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