Compact HSPICE model for IMOS device |
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| Authors: | Lin J Toh EH Shen C Sylvester D Heng CH Samudra G Yeo YC |
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| Affiliation: | Nat. Univ. of Singapore, Singapore; |
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| Abstract: | A compact HSPICE model has been developed for the newly proposed impact-ionisation MOS (IMOS) device for circuit simulation. Table lookup dependent sources and passive components have been employed to model the IMOS device. The approach shows good accuracy compared to time-consuming and non-scalable TCAD simulation of IMOS-based circuits. |
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