Etch characteristics of GaN and BN materials in chlorine-based plasmas |
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Authors: | N Medelci A Tempez D Starikov N Badi I Berishev A Bensaoula |
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Affiliation: | (1) Nitride Materials and Devices Laboratory, SVEC-University of Houston, Houston, TX |
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Abstract: | Reactive ion etching (RIE) was performed on GaN and BN thin films using chlorine-based plasmas. The optimum chemistry was
found to be BCl3/Cl2/N2/Ar and Cl2/Ar at 30 and 40 mtorr for GaN and BN etching, respectively. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy
(AES) analysis of the GaN and BN etched surfaces show a decrease in the surface nitrogen atomic composition and an increase
in chlorine impurity incorporation with increasing self-dc bias. A photo-assisted RIE (PA-PIE) process using an IR filtered
Xe lamp beam was then used and resulted in improved etch rates and surface composition. Optical emission spectroscopy (OES)
measurements have also shown photoenhancement of the etch process. |
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Keywords: | RIE GaN BN CL-based plasmas |
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