| PECVD SiO_2薄膜应力特性的研究 |
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| 引用本文： | 杨绪华 孙青. PECVD SiO_2薄膜应力特性的研究[J]. 固体电子学研究与进展, 1989, 9(2): 186-191 |
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| 作者姓名： | 杨绪华 孙青 |
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| 作者单位： | 西安电子科技大学(杨绪华)，西安电子科技大学(孙青) |
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| 摘 要： | 本文分析了等离子增强化学汽相淀积(PECVD)SiO_2膜的淀积过程,用激光束偏转法测量衬底形变弯曲技术研究了SiO_2膜的应力特性,讨论了SiO_2膜的应力与膜厚、折射率、测量温度及退火温度的关系,最后分析了SiO_2膜本征应力的产生机制。
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| 关 键 词： | SiO2 薄膜 应力 PECVD |
Investigation of PECVD SiO_2 Film Stress Characteristic |
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| Abstract: | In this paper, we analysed the Plasma Enhancement Chemical Vapor Deposition (PECVD)SiO2 Film deposition proceeding with activation gases SiH4 and N2O. The stress characteristic of the SiO2 film has been studied with laser beam deflection technique for measuring substrate deformation. The effect of film thickness, refraction index, measuring temperature and annealing temperature on the stress has been presented. In the end, we discussed the origin of the SiO2 film intrinsic stress. |
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