| CALCULATION OF PHASE DIAGRAM FOR PSEUDOBINARY GaAs-InAs |
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| 作者姓名： | Qiao Huan Shen Jianyun Li Guoxun |
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| 作者单位： | Qiao，Huan; Shen，Jianyun; Li，Guoxun(General Research Institute for Nonferrous Metals，Beijing 100088)Chatillon，C(Laboratoire de Thermodynamique et Physico-chimie Metallurgiques ENSEEG，BP75，38402 St.martin d′H eres，France) |
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| 摘 要： | ＣＡＬＣＵＬＡＴＩＯＮＯＦＰＨＡＳＥＤＩＡＧＲＡＭＦＯＲＰＳＥＵＤＯＢＩＮＡＲＹＧａＡｓ－ＩｎＡｓ￥Ｑｉａｏ，Ｈｕａｎ；Ｓｈｅｎ，Ｊｉａｎｙｕｎ；Ｌｉ，Ｇｕｏｘｕｎ（ＧｅｎｅｒａｌＲｅｓｅａｒｃｈＩｎｓｔｉｔｕｔｅｆｏｒＮｏｎｆｅｒｒｏｕｓＭｅｔａｌ...
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| 关 键 词： | GaAs-InAs Ⅲ-Ⅴ compound calculation of phase diagram miscibility gap |
CALCULATION OF PHASE DIAGRAM FOR PSEUDOBINARY GaAs-InAs |
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| Qiao,Huan, Shen,Jianyun, Li,Guoxun.CALCULATION OF PHASE DIAGRAM FOR PSEUDOBINARY GaAs-InAs[J].Transactions of Nonferrous Metals Society of China,1994(4). |
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| Authors: | Qiao Huan Shen Jianyun Li Guoxun |
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| Abstract: | The phase diagram for the pseudobinary GaAs-InAs has been calculated using the optimized thermodynamic data on accounting the influence of the elastic energy. which is induced by the mismatch of the growing lattice with the substrate in the process of epitaxy. The result shows that the miscibility gap in the solic phase of this system would be restrained by this elastic energy. |
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