HiPIMS的放电特性及其对薄膜结构和性能的调控EI北大核心CSCD

磁控溅射过程中的等离子体密度和离化率这些等离子体微观放电特性强烈影响着沉积薄膜的微观结构和性能,高功率脉冲磁控溅射技术(HiPIMS)凭借其较高的溅射粒子离化率的优势引起了广泛的研究和关注。为了探究HiPIMS的高离化率的产生原因和过程,掌握高功率脉冲磁控溅射技术对薄膜微观结构和性能的调控规律,从一般的磁控溅射技术原理出发,分析HiPIMS高离化率的由来及其与DC磁控溅射相比的技术优势,着重总结HiPIMS的宏观放电特点和微观等离子体特性;总结梳理近几年HiPIMS在硬质膜和透明导电薄膜领域的应用研究,明晰HiPIMS对薄膜微观晶体结构的影响及其对薄膜的力学、光电性能等的调控规律及其优势。HiPIMS独特的等离子体-靶相互作用,可以有效改善薄膜结晶特性,实现对光电性能的可控调控。

Discharge Characteristics of HiPIMS and Its Regulation on the Structure and Properties of Thin Films

The microstructure and properties of deposited films are strongly affected the plasma density and ionization rate during magnetron sputtering. High-power impulse magnetron sputtering (HiPIMS) are attracted extensive research and attention due to its advantages of high ionization rate of sputtering particles. In order to explore the cause and process of high ionization rate of HiPIMS and grasp the regulation rules of high power pulsed magnetron sputtering technology on the microstructure and properties of thin films, the origin of HiPIMS high ionization rate and its technical advantages compared with DC magnetron sputtering are analyzed based on the general principle of magnetron sputtering technology. The macroscopic discharge characteristics and microscopic plasma characteristics of HiPIMS are summarized emphatically. Next, the application research of HiPIMS in the field of hard and transparent conductive films in recent years is summarized, and the influence of HiPIMS on the microscopic crystal structure of thin films and its regulation rules and advantages on the mechanical and photoelectric properties of thin films are clarified. The unique plasma-target interaction of HiPIMS can effectively improve the crystallization characteristics of thin films and realize the controllable regulation of photoelectrical properties.