| IGBT的抗短路能力分析 |
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| 引用本文： | 陈永真. IGBT的抗短路能力分析[J]. 电力电子技术, 2007, 41(12): 131-133 |
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| 作者姓名： | 陈永真 |
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| 作者单位： | 辽宁工业大学,辽宁,锦州,121001 |
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| 摘 要： | 简述了IGBT短路保护的必要性和特殊性、IGBT短路安全工作区(SCSOA)的能力;介绍了SCSOA的特性及测试条件;分析了不同类型SCSOA的可信度与性能差异、IGBT短路过程中电流限制性能和管芯温升情况、高结温条件下IGBT的特性和可靠性;阐述了IGBT短路耐受性与实用条件的关系;提出了正确使用短路保护技术的建议.
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| 关 键 词： | 电力半导体器件 短路保护 驱动电路/绝缘栅型双极晶体管 |
| 文章编号： | 1000-100X（2007）12-0131-03 |
| 收稿时间： | 2007-07-16 |
| 修稿时间： | 2007-07-16 |
The Characteristics of IGBT Anti-Short-Circuit Ability |
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| CHEN Yong-zhen. The Characteristics of IGBT Anti-Short-Circuit Ability[J]. Power Electronics, 2007, 41(12): 131-133 |
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| Authors: | CHEN Yong-zhen |
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| Abstract: | The necessity as well as particularity of IGBT short circuit protection and the ability of IGBT SCSOA is described,the characteristics,test conditions,kinds creditability and difference characteristics of SCSOA are introduced.In the operation of short circuit the current limitation,core temperature raise and the characteristics together with creditability in the high temperature is analyzed.The relation between short current endurance of IGBT and using conditions is explained.In the end the proper proposal about applieation of short current protection teehnology is put forward. |
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| Keywords: | power semiconductor device short-circuit proteet drive eireuit/insulated gate bipolar transistor |
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