| Abstract: | This paper reviews the reliability problems of compound semiconductor transistors for microwave applications. These devices suffer from specific failure mechanisms, which are related to their limited maturity, with the exception of the GaAs MESFETs, which exhibit a stable technology and an assessed reliability. The metallizations employed in high electron mobility transistors (HEMTs) already benefit from this assessment. However, HEMT are affected by concerns related to hot carriers and impact ionization. The trapping of carriers and the generation of defects in the different layers are responsible for the observed instabilities. The stability of the base dopant is the main reliability concern for heterojunction bipolar transistors (HBTs). Beryllium outdiffuses from the base into the emitter and causes device degradation. Carbon has a lower diffusivity, but is affected by the presence of hydrogen, which prompts gain variations. Finally the hot carriers reliability concern in SiGe HBTs is briefly reviewed. |
