| 硅集成电路工艺技术的发展——为《微电子学》创刊二十周年而作 |
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| 引用本文： | 陈中佛.硅集成电路工艺技术的发展——为《微电子学》创刊二十周年而作[J].微电子学,1990(2). |
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| 作者姓名： | 陈中佛 |
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| 作者单位： | 无锡微电子联合公司 中国华晶电子集团公司副总工程师兼战略研究中心主任，教授级高级工程师 |
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| 摘 要： | 本文首先在总体上概述了集成电路工艺技术的发展。从双极工艺和MOS工艺两大分支说明了其发展过程、特点及现状水平,阐述了器件发展与工艺发展的相互关系。然后分节叙述了各个重点工艺技术的发展趋势与现状。
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| 关 键 词： | 硅集成电路 工艺技术 双极工艺 MOS工艺 |
The Evolvement of the Processing Technologies for Silicon Integrated Circuits |
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| Chen Zhongfu.The Evolvement of the Processing Technologies for Silicon Integrated Circuits[J].Microelectronics,1990(2). |
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| Authors: | Chen Zhongfu |
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| Affiliation: | Wuxi Microelectronics Inc. |
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| Abstract: | An overall review of the evolvement of processing technologies for Si ICs is made in the paper. Starting from two main branches, bipolar and MOS technologies,the evolving process, characteristics and the state-of-the-art of Si IC technologies are illustrated and the dependence of advances of the device on the progress of the processing technologies is also elaborated. Einally, the developing trend and status quo of critical technologies are described. |
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| Keywords: | Si integrated circuits Processing technology Bipolar technology MOS technology |
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