Bilayer Cr/Au contacts on n-GaN |
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Authors: | L. Dobos,L. Tó thB. Pé cz,Zs.J. Horvá thZ.E. Horvá th,A.L. Tó thB. Beaumont,Z. Bougrioua |
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Affiliation: | a Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O.B 49, H-1525 Budapest, Hungary b LUMILOG, 2720, Chemin Saint Bernard, Les Moulins 1, F-06220 Vallauris, France c IEMN Institute, CNRS and Lille 1 University, F-59652 Villeneuve d’Ascq, France |
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Abstract: | Cr/Au (40/65 nm) metal layers have been deposited by thermal evaporation onto n-GaN epitaxial layers grown by metal-organic chemical-vapour deposition (MOCVD) on a sapphire substrate. The samples have been annealed at 400, 700 and 900 °C for 10 min in vacuum. Techniques of TEM, EDS, HRTEM, FESEM, XRD and I-V characteristics have been used to characterize the micro-, and nanostructure, morphology, composition and electrical properties of the contacts before and after annealing. A binary phase of Cr3Ga4 and Au7Ga2 were identified at the interface of the n-GaN/Cr/Au contacts after annealing in vacuum at 700 and 900 °C. Current-voltage characterizations showed that the as-deposited and annealed Cr/Au contacts are rectifying up to 600 °C. After heat treatment in vacuum at 700 °C and 900 °C the Cr/Au contacts were linear. |
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Keywords: | GaN Contacts Solid phase reaction Transmission electron microscopy |
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