| LP同质过渡层对ZnO薄膜结构性能的影响 |
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| 引用本文： | 李勇强,朱兴文,李英伟,马季,夏义本. LP同质过渡层对ZnO薄膜结构性能的影响[J]. 压电与声光, 2008, 30(2): 221-223 |
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| 作者姓名： | 李勇强 朱兴文 李英伟 马季 夏义本 |
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| 作者单位： | 上海大学,材料学院,上海,200072 |
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| 基金项目： | 上海市科委资助项目 , 上海市重点科学基金 |
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| 摘 要： | 采用磁控溅射法低功率在玻璃衬底上制备低功率(LP)过渡层,再在其上高功率生长ZnO薄膜,研究了LP过渡层对薄膜结构性能的影响。XRD和SEM结果表明,引入LP过渡层后,高射频(RF)功率溅射的ZnO薄膜(002)定向性显著改善。随溅射功率的提高,薄膜(002)定向性有所下降,但致密性明显好转。与无过渡层薄膜相比,在溅射功率分别为30 W和50 W过渡层上生长的薄膜晶粒变大。研究表明,在30 W的LP过渡层上用200 W功率制备的薄膜性能最佳。
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| 关 键 词： | ZnO薄膜 磁控溅射法 低功率(LP)过渡层 高射频(RF)功率 |
| 文章编号： | 1004-2474(2008)02-0221-03 |
| 修稿时间： | 2006-12-18 |
Effects of LP Homo-buffer on the Structural Properties of ZnO Films Deposited by RF Magnetron Sputtering |
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| LI Yong-qiang,ZHU Xing-wen,LI Ying-wei,MA Ji,XIA Yi-ben. Effects of LP Homo-buffer on the Structural Properties of ZnO Films Deposited by RF Magnetron Sputtering[J]. Piezoelectrics & Acoustooptics, 2008, 30(2): 221-223 |
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| Authors: | LI Yong-qiang ZHU Xing-wen LI Ying-wei MA Ji XIA Yi-ben |
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| Abstract: | The effects of low-power(LP) buffers on the structural properties of ZnO thin films deposited under high power by RF magnetron sputtering have been investigated.The X-ray diffraction and scanning electron microscopy results indicate that,after inserting a LP-buffer,the c-orientation of the ZnO films deposited under high RF power is considerably improved and the grains become larger in comparison with that of the film without LP-buffer.With the increase of the RF power,the densification of the films improves with the slight decrease of the c-orientation.The high-quality ZnO film can be obtained on 30 W LP-buffer/glass substrate deposited under RF power of 200 W. |
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| Keywords: | ZnO thin film RF magnetron sputtering LP-buffer high RF power |
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