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Formation of surface structures on single-crystalline silicon under the action of nanosecond high-power ion beam pulses
Authors:Kovivchak  V. S.  Panova  T. V.  Krivozubov  O. V.  Davletkil’deev  N. A.
Affiliation:1.Institute of Semiconductor Physics (Omsk Division), Siberian Branch, Russian Academy of Sciences, Omsk, 644018, Russia
;2.Omsk State University, Omsk, 644077, Russia
;
Abstract:We have studied the formation of surface structures on single-crystalline silicon surface under the action of a nanosecond pulsed high-power proton-carbon ion beam. Morphological features of the structures that appear as a result of this processing are described and possible mechanisms of their formation are considered.
Keywords:
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