Formation of surface structures on single-crystalline silicon under the action of nanosecond high-power ion beam pulses |
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Authors: | Kovivchak V. S. Panova T. V. Krivozubov O. V. Davletkil’deev N. A. |
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Affiliation: | 1.Institute of Semiconductor Physics (Omsk Division), Siberian Branch, Russian Academy of Sciences, Omsk, 644018, Russia ;2.Omsk State University, Omsk, 644077, Russia ; |
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Abstract: | We have studied the formation of surface structures on single-crystalline silicon surface under the action of a nanosecond pulsed high-power proton-carbon ion beam. Morphological features of the structures that appear as a result of this processing are described and possible mechanisms of their formation are considered. |
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