Electrical Conduction in Single-Crystal Thallic Oxide: I, Crystals "As-Grown" from the Vapor in Air |
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| Authors: | V N SHUKLA G P WIRTZ |
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| Affiliation: | Department of Ceramic Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 |
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| Abstract: | Thallic oxide, "T12O3," has been shown to be a degenerate n -type semiconductor with resistivity varying from 60 to 150 μΩ-cm over the range 4° to 900°K. The carrier concentration was 7 × 1020 cm?3 and is temperature independent. Room-temperature Hall mobility was 105 cm2 V?1 s?1, increasing to 130 cm2 V?1 s?1 below 70°K. Donor states were shown to be native defects, probably oxygen vacancies. |
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