Study on impurity desorption induced by femtosecond pulse laser based on a stochastic process model

1 Introduction With the rapid shrinkage of semiconductor device size, the device failure induced by the impurity molecules and the residue water adsorbed on the substrate becomes a sig-nificant and persistent problem in micro/nanoscale devices. For instance, the impurity molecules on a solid thin film from physical or chemical processes during fabrication may lead to defects in the structure and lower the quality of the thin film1]. Another ex-ample is the stiction-related device failure. Wit…

Study on impurity desorption induced by femtosecond pulse laser based on a stochastic process model

With the advantages on non-equilibrium heating and desorption induced by electronic transition, the femtosecond pulse laser introduces a new way for solving the problem of impurity pollution adsorbed on a solid thin film in micro-electro-mechanical systems (MEMS). A model based on stochastic processes was established for stimulated desorption induced by the femtosecond pulse laser to interpret the interaction of the opti-cally excited hot electrons with the adsorbed molecules in a metal substrate. Numerical simulation results reveal a time-dependent desorption probability of adsorbed molecules and indicate that how key parameters of femtosecond pulse laser, such as incident laser energy flux, pulse duration, and wavelength of pulse, have a great effect on the desorption probability.