Influence of the voltage window on resistive switching memory characteristics based on g-C3N4 device |
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| Authors: | Xiaojun Wang Bai Sun Xiaoxia Li Bolin Guo Yushuang Zeng Shuangsuo Mao Shouhui Zhu Yudong Xia Shu Tian Weiting Luo |
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| Affiliation: | 1. Department of physics, Lvliang University, Lvliang, Shanxi 033001, China;2. School of Physical Science and Technology, Key Laboratory of Advanced Technologies of Materials, Ministry of Education of China, Southwest Jiaotong University, Chengdu 610031, China;3. Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Superconductivity and New Energy R&D Center (SNERDC), Southwest Jiaotong University, Chengdu, Sichuan 610031, China |
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| Abstract: | The resistance change of an insulator or semiconductor under applied current or voltage is defined as resistive switching effect, which is a significative physical performance in the exploit of new concept nonvolatile resistance random access memory (RRAM). In our work, the g-C3N4 powder was firstly fabricated by calcination method, and continuously a device with Ag/g-C3N4/FTO structure was prepared using drop-coated g-C3N4 powder to form a film onto FTO. It can be observed that the as-prepared cell exhibits an excellent resistive switching memory characteristic (HRS/LRS resistance ratio can be reached to ~?52) and good reliability under applied voltage window of 4.0?V. Finally, it is believed that the space charge limited conduction is appropriate to understanding such the memory behavior. |
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| Keywords: | Voltage window Resistive switching Nonvolatile Memory device |
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