| 二次离子发射的LTE模型及其在GaAs样品中的应用 |
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| 引用本文： | 陈新,陈春华,王佑祥. 二次离子发射的LTE模型及其在GaAs样品中的应用[J]. 真空科学与技术学报, 1994, 0(2) |
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| 作者姓名： | 陈新 陈春华 王佑祥 |
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| 作者单位： | 中国科学院表面物理国家重点开放实验室!北京，100080，中国科学院半导体研究所!北京，100081 |
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| 摘 要： | 介绍了二次离子发射的局部热平衡（LTE）模型的发展过程及其在GaAs样品SIMS定量分析中的应用，并尝试了用GaAs基体元素作内标的定量分析方法，取得了较好的结果。
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| 关 键 词： | 二次离子发射 局部热平衡模型 定量分析 |
THE LOCAL THERMAL EQUILIBRIUM MODEL OF SECONDARY ION EMISSION AND IT'S APPLICATION IN GaAs ANALYSIS |
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| Chen Xin, Chen Chunhua,Wang Youxiang. THE LOCAL THERMAL EQUILIBRIUM MODEL OF SECONDARY ION EMISSION AND IT'S APPLICATION IN GaAs ANALYSIS[J]. JOurnal of Vacuum Science and Technology, 1994, 0(2) |
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| Authors: | Chen Xin Chen Chunhua Wang Youxiang |
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| Abstract: | The local thermal equilibrium model of secondary ion emission and it's development as well as the application of the LTE model in GaAs quantitative analysis have been introduced. A quantitative analysis using GaAs's matrix elements Ga and As as internal standards has been attempted, a satisfactory result has been obtained. |
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| Keywords: | Secondary ion emission Local thermal equilibrium model Quantitative analysis |
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