Structural Analysis on Organic Thin-Film Transistor With Device Simulation |
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| Authors: | Chang-Hoon Shim Maruoka F Hattori R |
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| Affiliation: | Dept. of Electron., Kyushu Univ., Fukuoka, Japan; |
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| Abstract: | A 2-D device simulation for organic thin-film transistors (OTFTs) was carried out to reveal the characteristic difference between staggered and planar structures. Assuming the OTFT with Schottky barrier contact, the staggered-structure TFT has more current flow, bigger field-effect mobility, and lower contact resistance than the planar structure. The simulation results indicate that the source electrode of the staggered structure has better ability to supply the current than that of the planar structure. |
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