|
|||||
|
|
| MOCVD生长GaAs/Si材料及其在MESFET中的应用 | |
| 摘 要： | 本文研究了MOCVD生长GaAs/Si复合材料的生长工艺及材料特性,并生长出用于MESFET的多层结构材料。讨论了影响外延层电阻率的因素,并给出了GaAs/Si材料在MESFET中的应用结果。 |
GaAs on Si Grown by MOCVD for MESFET |
|
| Abstract: | The process and properties of GaAs on Si grown by MOCVD have been investigated and GaAs/Si heterostructures for MESFET have been fabricated. The paper discusses the influence of conditions on resistance of GaAs epilayers. The applications of GaAs Si material to MESFET are also given. |
| Keywords: | |
| 本文献已被 CNKI 等数据库收录！ | |