| MCT光导器件芯片室温电阻率不稳定因素探讨 |
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| 引用本文： | 尹敏 王开元. MCT光导器件芯片室温电阻率不稳定因素探讨[J]. 红外技术, 1994, 16(2): 9-11 |
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| 作者姓名： | 尹敏 王开元 |
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| 作者单位： | 昆明物理研究所 |
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| 摘 要： | 重点讨论ｘ值在０．２７附近的ＭＣＴ光导器件芯片电阻率随时间变化的问题。认为：ＭＣＴ芯片中Ｈｇ原子的逐渐逸出，导致材料ｘ值随时间而变化是使芯片室温电阻率变化的主要原因；在某些条件下（如加温），芯片表面可以形成高浓度的ｎ型薄层，从而对芯片的室温电阻率产生影响。
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| 关 键 词： | MCT芯片 红外探测器 室温电阻率 |
A Study of the Unstable Resistivity of MCT Wafers at Room Temperature |
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| Yin Min, WangKaiyuan. A Study of the Unstable Resistivity of MCT Wafers at Room Temperature[J]. Infrared Technology, 1994, 16(2): 9-11 |
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| Authors: | Yin Min WangKaiyuan |
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| Abstract: | Changes of MCT Wafer restivity with time have ho observed at room temperature. The cause is consided to be the gradual evaporation of Hg. As a result,composistion of the MCT material changes and a thin n-type layer may formed on the surface. When heatal or in some condihons, electron Concentrations of the n-type layer may be high, and the restivity of the whole wafer can be affected accordingly. |
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| Keywords: | MCT wafer Unstable restivity |
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