Resistive Switching Properties and Failure Behaviors of(Pt,Cu)/Amorphous ZrO_2/Pt Sandwich Structures

The effect of Pt and Cu electrodes on the resistive switching properties and failure behaviors of amorphous ZrO_2 ?lms were investigated. Compared with Cu/ZrO_2/Pt structures, the Pt/ZrO_2/Pt structures exhibit better resistive switching properties such as the higher resistance ratio of OFF/ON states, the longer switching cycles and narrow distribution of OFF state resistance(Roff). The switching mechanism in the Pt/ZrO_2/Pt structure can be attributed to the formation and rupture of oxygen vacancy ?laments; while in the Cu/Zr O2/Pt structure, there exist both oxygen vacancy ?laments and Cu ?laments. The formation of Cu?laments is related to the redox reaction of Cu electrode under the applied voltage. The inhomogeneous dispersive injection of Cu ions results in the dispersive Roff and signi?cant decrease of operate voltage.Schematic diagrams of the formation of conductive ?laments and the failure mechanism in the Cu/ZrO_2/Pt structures are also proposed.