| 双势垒量子阱薄膜压阻效应实验研究 |
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| 引用本文： | 谢斌,薛晨阳,张文栋,张斌珍.双势垒量子阱薄膜压阻效应实验研究[J].固体电子学研究与进展,2007,27(3):290-294. |
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| 作者姓名： | 谢斌 薛晨阳 张文栋 张斌珍 |
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| 作者单位： | 中北大学电子测试技术国家重点实验室,太原,030051;中北大学电子测试技术国家重点实验室,太原,030051;中北大学电子测试技术国家重点实验室,太原,030051;中北大学电子测试技术国家重点实验室,太原,030051 |
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| 摘 要： | 采用分子束外延方法在砷化镓衬底上生长了AlAs/GaAs双势垒量子阱薄膜结构。介绍了量子阱薄膜在单轴压力作用下的压阻实验,测试出薄膜在压力影响下的I-V曲线,并分析了量子阱薄膜压阻效应的成因。通过实验证实了量子阱薄膜具有较高灵敏度的压阻效应,其压阻灵敏度比目前常用的多晶硅的压阻灵敏度提高一个数量级。
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| 关 键 词： | 量子阱薄膜 压阻效应 压阻灵敏度 |
| 文章编号： | 1000-3819（2007）03-290-05 |
| 修稿时间： | 2006-03-17 |
Piezoresistive Effect Study of Double-barrier Superlattice Quantum Well Membrane |
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| XIE Bin,XUE Chenyang,ZHANG Wendong,ZHANG Binzhen.Piezoresistive Effect Study of Double-barrier Superlattice Quantum Well Membrane[J].Research & Progress of Solid State Electronics,2007,27(3):290-294. |
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| Authors: | XIE Bin XUE Chenyang ZHANG Wendong ZHANG Binzhen |
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| Affiliation: | National Key Lab. for Electronic Measurement Technology, North University of China, Taiyuan, 030051, CHN |
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| Abstract: | The used AlAs/GaAs superlattice quantum well membrane has grown by MBE on (001)-oriented GaAs substrates. In this paper, the uniaxial piezoresistive effect experiment on superlattice quantum well membrane has been introduced, the pressure-dependent current-voltage characteristic has been tested, the curve of piezoresistive effect and the cause of which has been analyzed. The high piezoresistive sensitivity of superlattice quantum well has been confirmed, the piezoresistive sensitivity of supperlattice quantum well is one order higher than that of polysilicon. |
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| Keywords: | quantum well membrane piezoresistive effect piezoresistive sensitivity |
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