| InGaN与采用InGaN作为背势垒的双异质结的生长 |
| |
| 引用本文： | 史林玉,张进城,王昊,薛军帅,欧新秀,付小凡,陈珂,郝跃.InGaN与采用InGaN作为背势垒的双异质结的生长[J].半导体学报,2010,31(12):123001-4. |
| |
| 作者姓名： | 史林玉 张进城 王昊 薛军帅 欧新秀 付小凡 陈珂 郝跃 |
| |
| 摘 要： | 我们研究了采用MOCVD生长了InGaN与InGaN和AlGaN/GaN/InGaN/GaN双异质结。我们发现InGaN的质量会严重影响AlGaN/GaN/InGaN/GaN双异质结的特性。通过优化生长压力与生长温度得到高结晶质量的InGaN薄膜。由于InGaN的极化方向与AlGaN的相反，使得GaN层与InGaN层之间出现了一个高势垒，提高了载流子的限域性并且降低了缓冲层的漏电。采用InGaN作为背势垒的双异质结的DIBL仅为1.5 mV/V。当VDS= 10 V时，测量得到的关态漏电流为2.6 µA/mm。
|
| 关 键 词： | 双异质结构 氮化铟镓 InGaN 高电子迁移率晶体管 化学气相沉积法 生长 晶体质量 泄漏电流 |
| 收稿时间： | 5/6/2010 11:56:11 AM |
| 修稿时间： | 7/19/2010 7:15:33 PM |
Growth of InGaN and double heterojunction structure with InGaN back barrier |
| |
| Shi Linyu,Zhang Jincheng,Wang Hao,Xue Junshuai,Ou Xinxiu,Fu Xiaofan,Chen Ke and Hao Yue.Growth of InGaN and double heterojunction structure with InGaN back barrier[J].Chinese Journal of Semiconductors,2010,31(12):123001-4. |
| |
| Authors: | Shi Linyu Zhang Jincheng Wang Hao Xue Junshuai Ou Xinxiu Fu Xiaofan Chen Ke and Hao Yue |
| |
| Affiliation: | Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institutes of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institutes of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institutes of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institutes of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institutes of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institutes of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institutes of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institutes of Microelectronics, Xidian University, Xi'an 710071, China |
| |
| Abstract: | |
| |
| Keywords: | InGaN back barrier double hererojunction carrier confinement |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《半导体学报》浏览原始摘要信息 |
|
点击此处可从《半导体学报》下载全文 |
|
