| InGaN与采用InGaN作为背势垒的双异质结的生长 |
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| 引用本文： | 史林玉,张进城,王昊,薛军帅,欧新秀,付小凡,陈珂,郝跃. InGaN与采用InGaN作为背势垒的双异质结的生长[J]. 半导体学报, 2010, 31(12): 123001-4 |
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| 作者姓名： | 史林玉 张进城 王昊 薛军帅 欧新秀 付小凡 陈珂 郝跃 |
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| 摘 要： | 我们研究了采用MOCVD生长了InGaN与InGaN和AlGaN/GaN/InGaN/GaN双异质结。我们发现InGaN的质量会严重影响AlGaN/GaN/InGaN/GaN双异质结的特性。通过优化生长压力与生长温度得到高结晶质量的InGaN薄膜。由于InGaN的极化方向与AlGaN的相反，使得GaN层与InGaN层之间出现了一个高势垒，提高了载流子的限域性并且降低了缓冲层的漏电。采用InGaN作为背势垒的双异质结的DIBL仅为1.5 mV/V。当VDS= 10 V时，测量得到的关态漏电流为2.6 µA/mm。
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| 关 键 词： | 双异质结构 氮化铟镓 InGaN 高电子迁移率晶体管 化学气相沉积法 生长 晶体质量 泄漏电流 |
| 收稿时间： | 2010-05-06 |
| 修稿时间： | 2010-07-19 |
Growth of InGaN and double heterojunction structure with InGaN back barrier |
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| Shi Linyu,Zhang Jincheng,Wang Hao,Xue Junshuai,Ou Xinxiu,Fu Xiaofan,Chen Ke and Hao Yue. Growth of InGaN and double heterojunction structure with InGaN back barrier[J]. Chinese Journal of Semiconductors, 2010, 31(12): 123001-4 |
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| Authors: | Shi Linyu Zhang Jincheng Wang Hao Xue Junshuai Ou Xinxiu Fu Xiaofan Chen Ke Hao Yue |
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| Affiliation: | Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institutes of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institutes of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institutes of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institutes of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institutes of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institutes of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institutes of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Institutes of Microelectronics, Xidian University, Xi'an 710071, China |
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| Abstract: | |
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| Keywords: | InGaN back barrier double hererojunction carrier confinement |
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