Band alignment and enhanced breakdown field of simultaneously oxidized and nitrided Zr film on Si |
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| Authors: | Yew Hoong Wong Kuan Yew Cheong |
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| Affiliation: | 1.Energy Efficient and Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia |
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| Abstract: | The band alignment of ZrO2/interfacial layer/Si structure fabricated by simultaneous oxidation and nitridation of sputtered Zr on Si in N2O at 700°C for different durations has been established by using X-ray photoelectron spectroscopy. Valence band offset of ZrO2/Si was found to be 4.75 eV, while the highest corresponding conduction offset of ZrO2/interfacial layer was found to be 3.40 eV; owing to the combination of relatively larger bandgaps, it enhanced electrical breakdown field to 13.6 MV/cm at 10-6 A/cm2. |
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| Keywords: | oxidation sputtered-Zr nitrous oxide band alignment electrical breakdown field |
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