| 多晶硅发射极晶体管放大系数稳定性研究 |
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| 引用本文： | 孙建洁,张可可,许帅,张明.多晶硅发射极晶体管放大系数稳定性研究[J].电子与封装,2021,21(4):50-53. |
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| 作者姓名： | 孙建洁 张可可 许帅 张明 |
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| 作者单位： | 无锡中微晶园电子有限公司,江苏无锡214035 |
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| 摘 要： | 通过对NPN型多晶硅发射极晶体管的工艺过程进行分析,对多晶淀积工艺过程提出严格的控制方案,使多晶界面氧化层厚度稳定在0.6～0.8 nm.同时,对基区与发射区退火工艺进行优化,使多晶发射极晶体管放大系数的片内均匀性从30％改善至20％,片间均匀性从12％改善至9％,显著提升了产品的成品率.
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| 关 键 词： | 多晶硅发射极晶体管 放大系数 界面氧化层 退火 |
Research on the Stability of Amplification Coefficient of Ploysilicon Emitter Transistor |
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| SUN Jianjie,ZHANG Keke,XU Shuai,ZHANG Ming.Research on the Stability of Amplification Coefficient of Ploysilicon Emitter Transistor[J].Electronics & Packaging,2021,21(4):50-53. |
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| Authors: | SUN Jianjie ZHANG Keke XU Shuai ZHANG Ming |
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| Affiliation: | (Wuxi Zhongwei Microchips Co.,Ltd.,Wuxi 214035,China) |
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| Abstract: | In this paper,the technological process of NPN type ploysilicon emitter transistor is analyzed,and a strict control scheme is proposed for the ploysilicon deposition process,so that the thickness of the oxide layer at the multi-grain interface is stable at 0.6-0.8 nm.At the same time,the annealing process of base area and transmitting area was optimized,which improved the inter-chip uniformity of the amplification coefficient of the ploysilicon emitter transistor from 30%to 20%,and the uniformity between the chips increased from 12%to 9%,which significantly improved the product yield. |
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| Keywords: | ploysilicon emitter transistor amplification coefficient interface oxide layer annealing |
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