| 功率集成器件及其兼容技术的发展 |
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| 引用本文： | 乔明,袁柳.功率集成器件及其兼容技术的发展[J].电子与封装,2021,21(4):71-86. |
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| 作者姓名： | 乔明 袁柳 |
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| 作者单位： | 电子科技大学电子薄膜与集成器件国家重点实验室,成都610054 |
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| 基金项目： | 国家自然科学基金(61674027);四川省应用基础研究项目(18YYJC0482)。 |
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| 摘 要： | 功率集成器件在交流转直流(AC/DC)电源转换IC、高压栅驱动IC、LED驱动IC等领域均有着广泛的应用.介绍了典型的可集成功率高压器件,包括不同电压等级的横向双扩散金属氧化物半导体场效应晶体管(LDMOS)以及基于硅和SOI材料的横向绝缘栅双极型晶体管(LIGBT),此外还介绍了高低压器件集成的BCD工艺和其他的功率...
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| 关 键 词： | 功率集成器件 横向双扩散金属氧化物半导体场效应晶体管 横向绝缘栅双极型晶体管 BCD工艺 兼容技术 |
Development of Integrated Power Devices and Compatible Technologies |
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| QIAO Ming,YUAN Liu.Development of Integrated Power Devices and Compatible Technologies[J].Electronics & Packaging,2021,21(4):71-86. |
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| Authors: | QIAO Ming YUAN Liu |
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| Affiliation: | (The State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China) |
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| Abstract: | Integrated power devices are widely used in AC/DC power conversion ICs,high-voltage gate driver ICs,LED driver ICs and other fields.This article introduces typical integrated high-voltage power devices,including lateral double-diffusion MOSFET(LDMOS)of different voltage levels and lateral insulated gate bipolar transistor(LIGBT)based on silicon and SOI.In addition,it also introduces the BCD process of high and low voltage device integration and other key power integration technologies,including isolation technology,high voltage interconnection technology,dV/dt technology,di/dt technology,anti-latch-up technology,etc.,and finally the development trend of integrated power devices and compatible technologies are discussed. |
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| Keywords: | integrated power device lateral double-diffusion MOSFET lateral insulated gate bipolar transistor BCD process compatible technology |
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