Preparation and characterization of Zn18O/Zn16O isotope heterostructure thin films |
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| Authors: | Kenji Matsumoto Yutaka Adachi Isao Sakaguchi Naoki Ohashi Hajime Haneda |
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| Affiliation: | 1. Department of Applied Science for Electronics and Materials, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, 6-1 Kasuga-kouen, Kasuga, Fukuoka 816-8580, Japan;2. National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan;1. Department of Chemistry, Indian Institute of Technology (Banaras Hindu University) Varanasi, Varanasi 221 005, India;2. Department of Ceramic Engineering, Indian Institute of Technology (Banaras Hindu University) Varanasi, Varanasi 221 005, India;1. BK21 Physics Division and Department of Physics, Sungkyunkwan University, Suwon 440-746, Republic of Korea;2. Division of Science Education (Physics), Institute of Fusion Science, Chonbuk National University, Jeonju 561-756, Republic of Korea;3. Materials Deformation Department, Korea Institute of Materials Science (KIMS), Changwon, Gayeongnam 51508, Republic of Korea;1. CONICET, LAFISO y Nanoproject, Facultad de Ciencias Exactas y Tecnología, Universidad Nacional de Tucumán, Avenida Independencia 1800, 4000 San Miguel de Tucumán, Argentina;2. Instituto de Física del Litoral, CONICET-Universidad Nacional del Litoral, Güemes 3450, 3000 Santa Fe, Argentina;3. CONICET, LNPD y Nanoproject, Facultad de Ciencias Exactas y Tecnología, Universidad Nacional de Tucumán, Avenida Independencia 1800, 4000 San Miguel de Tucumán, Argentina;4. Departamento de Física, Facultad de Bioquímica y Ciencias Biológicas, Universidad Nacional del Litoral, Ciudad Universitaria, 3000 Santa Fe, Argentina;1. Department of Physics, University of Puerto Rico, San Juan, PR 00936-8377, USA;2. Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Science, Chongqing 400714, China;1. Department of Physics, Urumu Dhanalakshmi College, Trichy 620 019, Tamilnadu, India;2. Department of Physics, AIMAN College of Arts and Science for Women, Trichy 620 021, Tamilnadu, India |
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| Abstract: | An oxygen isotope-based heterostructure zinc oxide (ZnO) thin film, Zn16O/Zn18O/Zn16O, was made by pulsed laser deposition on an a-face sapphire substrate. The isotope-enriched Zn18O layer was made by irradiation of the isotope oxygen radical (18O*). The isotopic ratio in the heterostructure film was analyzed via secondary ion mass spectroscopy (SIMS). The ratio of exchange from 16O to 18O was approximately 70% when the oxygen isotope was irradiated as a radical, while it was approximately 10% when the oxygen isotope was supplied as 18O2 gas. |
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