Mechanical properties of PECVD thin ceramic films |
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Authors: | Ghatu Subhash Philip Hittepole Spandan Maiti |
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Affiliation: | 1. Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China;2. National Center for Advanced Packaging, Wuxi 214135, China;3. Piotech Co. Ltd, Shenyang 110179, China;4. Jiangsu R& D Center for Internet of Things, Wuxi 214135, China;1. LPMT, Département MMPF (EA CNRS 4365), Université de Haute Alsace, 61 rue Albert Camus, 68093 Mulhouse, France;2. FEMTO-ST, Département MN2S (UMR CNRS 6174), Université de Franche-Comté, 4 place Tharradin, 25211 Montbéliard, France;3. FEMTO-ST, Département DMA (UMR CNRS 6174), Université de Franche-Comté, 24 chemin de l''Epitaphe, 25000 Besançon, France |
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Abstract: | Silicon dioxide (thickness 350 nm and 969 nm) and silicon nitride (thickness 218 nm) films deposited on silicon substrate using plasma enhanced chemical vapor deposition process were investigated using a Berkovich nanoindenter. The load-depth measurements revealed that the oxide films have lower modulus and hardness compared to the silicon substrate, where as the nitride film has a higher hardness and slightly lower modulus than the substrate. To delineate the substrate effect, a phenomenological model, that captures most of the ‘continuous stiffness measurement’ data, was proposed and then extended on both sides to determine the film and substrate properties. The modulus and hardness of the oxide film were around 53 GPa and 4–8 GPa where as those of the nitride film were around 150 GPa and 19 GPa, respectively. These values compare well with the measurements reported elsewhere in the literature. |
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