Alumina based ceramics for high-voltage insulation |
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| Authors: | M Touzin D Goeuriot C Guerret-Piécourt D Juvé H-J Fitting |
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| Affiliation: | 1. Laboratoire de Structure et Propriétés de l’Etat Solide, UMR CNRS 8008, Université de Lille 1, 59655 Villeneuve d’Ascq, France;2. Centre Sciences des Matériaux et des Structures, UMR CNRS 5146, Ecole Nationale Supérieure des Mines, 158 cours Fauriel, F-42023 Saint-Etienne Cedex 2, France;3. Laboratoire de Tribologie et Dynamique des Systèmes, Ecole Centrale de Lyon, UMR CNRS 5513, 36 avenue Guy de Collongue, F-69134 Ecully Cedex, France;4. Physics Department, University of Rostock, Universitätsplatz 3, D-18051 Rostock, Germany;1. University of Chinese Academy of Sciences, Beijing 100049, China;2. State Key Laboratory of Ore Deposit Geochemistry, Institute of Geochemistry, Chinese Academy of Sciences, Guiyang 550002, Guizhou, China;3. Bijie Highland Porcelain Insulator Limited Liability Company, Bijie 551700, Guizhou, China;1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, PR China;2. Key Lab of Functional Materials for Electronic Information (B), Ministry of Education, Wuhan 430074, PR China;3. Science and Technology on High Power Microwave Laboratory, Institute of Applied Electronics, CAEP, Mianyang 621900, PR China;1. Curso de Engenharia Cerâmica, UNIBAVE (Centro Universitário Barriga Verde), 88845-000 Cocal do Sul, SC, Brazil;2. Departamento de Engenharia Cerâmica e do Vidro, CICECO (Centro de Investigação em Materiais Cerâmicos e Compósitos), Universidade de Aveiro, 3810-193 Aveiro, Portugal;3. Programa de Pós-Graduação em Ciência e Engenharia de Materiais–PPG-CEM, UFSCar (Universidade Federal de São Carlos), 13565-905 São Carlos, SP, Brazil;4. Programa de Pós-Graduação em Ciência e Engenharia de Materiais–PPGCEM, UNESC (Universidade do Extremo Sul Catarinense), 88806-000 Criciúma, SC, Brazil;1. State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;2. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;3. School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai 200444, China |
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| Abstract: | Dielectric breakdown constitutes an important limitation in the use of insulating materials under high-voltage since it can lead to the local fusion and sublimation of the insulator. The role of electrical charge transport and trapping in alumina ceramics on their resistance to this catastrophic phenomenon is studied in this work. In polycrystalline materials, the interfaces between the various phases play a main role because they constitute potential sites for the trapping of electrical charges. The density and the nature of these interfaces can be controlled by the way of the microstructure parameters. So, the aim of the present paper is to highlight the influence of average grain size and intergranular phase crystallization rate on the ability of polycrystalline alumina materials to resist to dielectric breakdown. Thus, it is shown that the control of the process conditions (sintering aids content, powder grain size and thermal cycle) makes it possible to change not only the density (by the average grain size) but also the nature (by the crystallization or not of anorthite) of the grain boundaries. On one hand, at room temperature a high density of interfaces, due to low grain size and highly crystallized intergranular phase, leads to a high dielectric strength. On the other hand, at higher temperature (250 °C), the presence of vitreous intergranular phase makes it possible to delay breakdown. That behaviour is explained thanks to charge transport and trapping characterizations. |
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