用氧化镉(CdO)为发射区的InGaAsP/InP双异质结晶体管

本文提出和研制了一个新型的InGaAsP/InP双极型晶体管.在单片集成电路中它能与1.55μmInGaAsP/InP双异质结激光器共容而组成一个晶体管-激光器器件.该晶体管的主要特点是采用氧化镉(CdO)薄层作为器件发射区,由InP组成收集区而形成NpN双异质结晶体管.测量结果表明晶体管能双向工作,测得的正向共发射极电流增益为40(V_(CE)=5V,Ic=1mA),反向增益为8(V_(CE)=1.5V,Ic=100μA).文中还给出了h_(fe)—I_c特性和晶体管CdO-InGaAsP发射结的伏安特性.

An InGaAsP-lnP Double Heterojunction Bipolar Transistor with a CdO Emitter

In this paper, a novel InGaAsP-InP heterojunction bipolar transistor which is fully compatible with 1.55uuuuum DH InGaAsP-InP laser forming a transistor-laser device in monolithic integrated circuits is proposed and evaluated. The main feature of the transistor is the adoption of a CdO thin film as a wide gap emitter for the transistor in conjunction with an InP wide gap collector forming the NpN double heterojunction bipolar transistor. Experimental results showed that the transistor could be operated bilaterally with a forward current gain hfet = 40 (VcE= 5V, Ic = 1mA) and a reverse current gain hfer=8(VcE=1.5V, Ic = 100μ.A) obtained. Other results including hfe-Ic behavior and I-V characteristics of the CdO-InGaAsP emitter are presented.