MIS结构界面参数的测量

本文在理论上和实验上发展了变温光电法,借助该法不仅可测量MIS结构器件的表面势垒高度,而且可测量其品质因数n值和界面态密度。该法已应用于比透明金属结构更重要的栅状电极的MIS结构器件中。文中给出实验样品的测试结果。

The Measurement of Interface Parameters of MIS Structure

In this paper a new change-temperature photoelectric method is developed theoretically and experimentally. By means of this method, we not only determine the surface barrier heights in MIS structure, but also measure the interface state density and the diode quality factor n. The method has extensively beea applied to the gate-type MIS structure which is more important than transparent metal one. Given in this paper are the samples with measured results.