Automated compositional control of Hg1−xCdxTe during MBE, using in situ spectroscopic ellipsometry |
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| Authors: | L A Almeida J N Johnson J D Benson J H Dinan B Johs |
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| Affiliation: | (1) E-OIR Measurements, Inc., 22553 Spotsylvania, VA;(2) Night Vision and Electronic Sensors Directorate, 22060 Ft. Belvoir, VA;(3) J. A. Woollam Co., Inc., 68508 Lincoln, NB |
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| Abstract: | The implementation of a feedback control system for maintaining a desired compositional value in Hg1−xCdxTe epilayers is reported. An 88-wavelength ellipsometer monitored the Cd content (x) of a Hg1−xCdxTe film during molecular beam epitaxy, and deviations from a pre-determined set-point were automatically corrected via adjustments
in the CdTe effusion cell temperature. The accuracy of this system (Δx∼0.002) was confirmed by Fourier transform infrared
transmission measurements made ex situ on the epilayers. |
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| Keywords: | HgCdTe infrared (IR) detectors in situ control molecular beam epitaxy (MBE) spectroscopic ellipsometry |
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