Transmission electron microscopy study of the effect of selenium doping on the ordering of GalnP2 |
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Authors: | J P Goral Sarah R Kurtz J M Olson A Kibbler |
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Affiliation: | (1) Solar Energy Research Institute, 1617 Cole Blvd., 80401 Golden, Colorado |
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Abstract: | Selenium doped Ga0.51In0.49P films have been grown by metalorganic chemical vapour deposition at 600, 670 and 740° C. The extent of ordering of the Group
III sublattice has been monitored by transmission electron microscopy. Ordering disappears at carrier concentrations on the
order of 1018 cm−3 for samples grown at 600 and 740° C although a small degree of ordering persists in the samples grown at 670° C up to a carrier
concentration of 1019 cm−3. At each growth temperature, the ordering observed decreased and the bandgap measured increased with increasing Se doping. |
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Keywords: | GaInP2 MOCVD ordering |
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