Origin of size distributions in ZnSe self-organized quantum dots grown on ZnS layers |
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Authors: | Takehiko Tawara Satoru Tanaka Hidekazu Kumano Ikuo Suemune |
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Affiliation: | (1) Research Institute for Electronic Science, Hokkaido University, Kita-12, Nishi-6, Kita-ku, 060-0812 Sapporo, Japan |
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Abstract: | Main factors which determine the size, the standard deviations which show the degree of the size fluctuations for the average dot height and diameter, and density in ZnSe self-organized quantum dots (QDs) grown on ZnS layers were studied. By lowering the growth temperature the QDs average size and its standard deviation decreased and the density increased due to the slower surface migration. With the application of the scaling theory, it was revealed that the normalized size distributions were uniquely determined by the nucleation process although the apparent standard deviations of the QD sizes were dependent on the growth temperature. The influence of surface roughness of the underneath layer on the formation of the relations of the dot height and diameter was also examined. It was shown that the fluctuation of the surface potential contributes significantly to the apparent standard deviations of ZnSe self-organized QDs sizes. |
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Keywords: | ZnSe self-organized quantum dot size distribution metalorganic vapor phase epitaxy (MOVPE) |
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