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| 低介电高强度多孔氮化硅陶瓷的研制 | |
| 引用本文： | 廖荣,程之强,胡利明,王重海,袁维军,张训虎.低介电高强度多孔氮化硅陶瓷的研制[J].现代技术陶瓷,2007,27(1):3-5,23. |
| 作者姓名： | 廖荣 程之强 胡利明 王重海 袁维军 张训虎 |
| 作者单位： | 1. 山东工业陶瓷研究设计院,淄博,255031;济南大学材料学院,济南,250022 2. 山东工业陶瓷研究设计院,淄博,255031;武汉理工大学材料学院,武汉,430070 3. 山东工业陶瓷研究设计院,淄博,255031 |
| 摘 要： | 以氮化硅为基体,通过加入一定量的特殊无机添加剂,控制好相关工艺参数成功地制备出低密高强低介电的多孔氮化硅材料。采用有机涂层对多孔氮化硅材料表面进行封孔处理,通过对封孔前后材料电性能的对比分析得出:涂层对封孔后表面致密的整体材料电性能影响微小。 |
| 关 键 词： | 多孔陶瓷 氮化硅 无机添加剂 封孔 电性能 |
Low Dielectric High Strength Properties Porous Silicon Nitride Ceramics Development |
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| Liao Rong,Cheng Zhiqiang,Hu Liming,Wang Chonghai,Yuan Weijun,Zhang Xunhu.Low Dielectric High Strength Properties Porous Silicon Nitride Ceramics Development[J].Advanced Ceramics,2007,27(1):3-5,23. | |
| Authors: | Liao Rong Cheng Zhiqiang Hu Liming Wang Chonghai Yuan Weijun Zhang Xunhu |
| Abstract: | Take the silicon nitride as the substrate, through joins the ration the special inorganic chemical additive, controls the good correlation craft parameter successfully to prepare the low density high strength low dielectric porous silicon nitride material. Uses the organic coating to carry on to the porous silicon nitride material surface seals hole processing. Through to seals around the hole the material electricity performance contrast analysis to obtain: The coating after seals the hole the superficial compact overall material electricity performance influence to be small. |
| Keywords: | porous ceramics silicon nitride inorganic chemical additive seals the hole electricity performance |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ | |