Fast tunneling programming of nonvolatile memories |
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| Authors: | Versari R Pieracci A Morigi D Ricco B |
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| Affiliation: | Dipt. di Elettronica Inf. e Sistemistica, Bologna Univ.; |
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| Abstract: | This work investigates the possibility of programming nonvolatile memories in the ns time scale, for possible replacement of DRAMs, at least in special applications where low-power requirements do not allow frequent data refreshing. The study demonstrates the possibility of using high voltage tunneling pulses to achieve program times significantly shorter than 100 ns with acceptable oxide damage |
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