| MFS结构钛酸铋铁电薄膜掺铌改性研究 |
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| 引用本文： | 左伟华,万莉莉. MFS结构钛酸铋铁电薄膜掺铌改性研究[J]. 电子器件, 2011, 34(5): 494-497 |
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| 作者姓名： | 左伟华 万莉莉 |
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| 作者单位： | 湖南省怀化学院物理与信息工程系; |
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| 基金项目： | 湖南省怀化学院院级优秀青年项目(HHUQ2008-02) |
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| 摘 要： | 基于MFS结构铁电存储器的需要,采用溶胶-凝胶工艺,在p-Si衬底上制备了对Bi4Ti3O12进行B位Ti元素铌元素取代的铁电薄膜,并电镀上银电极构成MFS结构.研究了掺杂浓度对薄膜的微观结构及铁电性能的影响.研究表明,650℃进行退火的BTN薄膜生长形态良好；2％掺杂取代的薄膜铁电性能最佳,剩余极化强度Pr可达到19...
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| 关 键 词： | 铁电薄膜 铁电存储器 钛酸铋 溶胶-凝胶工艺 B位掺杂 铌元素 |
Research on ferroelectric properties of Nb-doped Bi4Ti3O12 with MFS structure |
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| ZUO Weihua,WAN Lili. Research on ferroelectric properties of Nb-doped Bi4Ti3O12 with MFS structure[J]. Journal of Electron Devices, 2011, 34(5): 494-497 |
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| Authors: | ZUO Weihua WAN Lili |
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| Affiliation: | ZUO Weihua*,WAN Lili(Department of Physics and Information Engineering Huaihua University,Huaihua Hunan 418000,China) |
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| Abstract: | To fulfill the need of ferroelectric storage with MFS structure,Bi4Ti3O12 films was prepared on p-Si substrate,whose B site Ti element was replaced by Nb element.The Ag electrode was then grown on the surface of the films using electroplating method to form the MFS structure.We researched on the effects of the amount of Nb to the structures and the ferroelectric properties of the films.The Researches show that with the 650 ℃ anneal temperature and the 2% replaced Ti by Nb,the BTN films get the best crystal structure and the best ferroelectric properties with Pr=19.01 μC/cm2 and Ec=200 kV/cm. |
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| Keywords: | ferroelectric films ferroelectric storage Bi4Ti3O12 Sol-Gel B site doped Nb element |
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