| 有机非挥发存储器件:浮栅结构有机薄膜晶体管 |
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| 引用本文： | 吴承龙,杨建红,贾水英,蔡雪原,盛晓燕. 有机非挥发存储器件:浮栅结构有机薄膜晶体管[J]. 电子器件, 2011, 34(4): 355-358 |
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| 作者姓名： | 吴承龙 杨建红 贾水英 蔡雪原 盛晓燕 |
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| 作者单位： | 兰州大学微电子研究所; |
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| 摘 要： | 提出了一种浮栅结构的新型有机薄膜晶体管(FG-OTFT)器件,并阐述了这种器件的工作机理.该器件通过控制浮 置栅上的电荷来控制 FG-OTFT 器件的阈值电压的大小,而器件不同的阈值电压便可用来存储“0”和“1”两个状态,故这种器 件可以被用作有机非挥发存储器.我们通过计算机数值模拟的方法对这种器件进行了研究.研究表明...
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| 关 键 词： | 存储器件 浮栅结构OTFT 数值模拟 记忆窗口 器件特性 |
Organic Non-volatile Memory Device: Floating-gate Organic Thin Film Transistor |
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| WU Chenglong,YANG Jianhong,JIA Shuiying,CAI Xueyuan,SHENG Xiaoyan. Organic Non-volatile Memory Device: Floating-gate Organic Thin Film Transistor[J]. Journal of Electron Devices, 2011, 34(4): 355-358 |
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| Authors: | WU Chenglong YANG Jianhong JIA Shuiying CAI Xueyuan SHENG Xiaoyan |
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| Affiliation: | WU Chenglong,YANG Jianhong~*,JIA Shuiying,CAI Xueyuan,SHENG Xiaoyan (Institute of Microelectronics,School of Physical Science and Technology,Lanzhou University,Lanzhou 730000,China) |
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| Abstract: | A new structure is proposed for organic thin fdm transistors(OTFT) and the operation of the device is presented.The threshold voltage of this device can be adjusted by controlling the quantity of electric charge on floating gate,and the different threshold voltages can be used to store two different states:0 and 1.So this device can be used as organic non-volatile memory device.This device is studied by the method of numeric simulation,and the study shows this memory device has a large memory window about 4... |
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| Keywords: | memory device floating gate OTFT numeric simulation memory window device characteristics |
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